Integrated reactive material erasure element with phase change memory

ABSTRACT

A reactive material erasure element including a reactive material is located between PCM cells and is in close proximity to the PCM cells. The reaction of the reactive material is trigger by a current applied by a bottom electrode which has a small contact area with the reactive material erasure element, thereby providing a high current density in the reactive material erasure element to ignite the reaction of the reactive material. Due to the close proximity of the PCM cells and the reactive material erasure element, the heat generated from the reaction of the reactive material can be effectively directed to the PCM cells to cause phase transformation of phase change material elements in the PCM cells, which in turn erases data stored in the PCM cells.

STATEMENT OF GOVERNMENT RIGHTS

This invention was made with Government support under Contract No.:N00014-12-C-0472 awarded by the Office of Navy Research. The Governmenthas certain rights in this invention.

BACKGROUND

The present application relates to phase change memory cells, and moreparticularly to integration of reactive material erasure elements withphase change memory cells.

Phase change memory (PCM) is a non-volatile solid-state memorytechnology that utilizes phase change materials having differentelectrical properties in their crystalline and amorphous phases.Specifically, the amorphous phase has a higher resistance than thecrystalline phase. PCM cells are often programmed using heat generatedby an electrical current to control the state of phase change materials.

PCM cells retain data stored therein even when electrical power fails oris turned off, which makes PCM cells vulnerable to tampering/attacks.Reactive materials (RM) which can generate heat through a spontaneouslyexothermic reaction have been explored as erasure elements in anintegrated circuit containing PCM cells. The heat generated from thereaction of the reactive material can be used to induce phasetransformation of the phase change material if sufficient heat can bedirected to the PCM cells when tampering occurs, thus erasing the datastored in the PCM cells. Employing the reactive material as erasureelements is attractive since after erasure, there is no way to reverseengineer the bits in the PCM cells, while the remaining portion of theintegrated circuit remains intact. Therefore, there remains a need todevelop a method for integrating PCM cells and RM erasure elements thatallows effectively triggering the erasure of the PCM cells.

SUMMARY

The present application provides a method for integrating a reactivematerial (RM) erasure element with PCM cells. A reactive materialerasure element comprising a reactive material is located between PCMcells and is in close proximity to the PCM cells. The reaction of thereactive material is trigger by a current applied by a bottom electrodewhich has a small contact area with the reactive material erasureelement, thereby providing a high current density in the reactivematerial erasure element to ignite the reaction of the reactivematerial. Due to the close proximity of the PCM cells and the reactivematerial erasure element, the heat generated from the reaction of thereactive material can be effectively directed to the PCM cells to causephase transformation of phase change material elements in the PCM cells,which in turn erases data stored in the PCM cells.

In one aspect of the present application, a semiconductor structure isprovided. The semiconductor structure includes a phase change memory(PCM) cell including a first bottom electrode, a phase change materialelement and a top electrode and a reactive material (RM) erasure elementlocated on one side of the PCM cell and contacting a top surface of asecond bottom electrode.

In another aspect of the present application, a semiconductor structureis provided. The semiconductor structure includes an array of phasechange memory (PCM) cells arranged in rows and columns. Each of the PCMcells includes a first bottom electrode, a phase change material elementand a top electrode. The semiconductor structure further includes atleast one reactive material (RM) erasure element. The at least one RMerasure elements is disposed between each pair of adjacent columns ofthe PCM cells and contacts a top surface of a second bottom electrode.

In yet another aspect of the present application, a method of forming asemiconductor structure is provided. The method includes forming a firstbottom electrode and a second bottom electrode extending through aninsulator layer. The first bottom electrode contacts a top surface of afirst bottom contact structure and the second bottom electrode contactsa top surface of a second bottom contact structure. The first and secondbottom contact structures are electrically coupled to an accesscircuitry. A stack of, from bottom to top, a phase change materialelement and a top electrode is then formed contacting a top surface ofthe first bottom electrode. Next, a dielectric layer is formed over thestack, the second bottom electrode and the insulator layer. Afterforming a trench extending through the dielectric layer to expose thesecond bottom electrode, a reactive material (RM) erasure element isformed in the trench. The RM erasure element has a top surface locatedbelow a top surface of the dielectric layer. Next, a trench fill portionis formed over the RM erasure element to completely fill the trench.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a cross-sectional view of an exemplary semiconductor structureincluding an array of phase change memory (PCM) cells formed over asemiconductor substrate including an access circuitry according to anembodiment of the present application.

FIG. 2 is a cross-sectional view of the exemplary semiconductorstructure of FIG. 1 after forming a first dielectric cap layer onexposed surfaces of the PCM cells and an insulator layer that surroundsan array of bottom electrodes.

FIG. 3 is a cross-sectional view of the exemplary semiconductorstructure of FIG. 2 after forming a first dielectric layer over thefirst dielectric cap layer.

FIG. 4 is a cross-sectional view of the exemplary semiconductorstructure of FIG. 3 after forming a trench extending through the firstdielectric layer and the first dielectric cap layer.

FIG. 5 is a cross-sectional view of the exemplary semiconductorstructure of FIG. 4 after forming a reactive material (RM) erasureelement within the trench.

FIG. 6 is a cross-sectional view of the exemplary semiconductorstructure of FIG. 5 after forming a second dielectric cap layer over thefirst dielectric layer and the RM erasure element and forming a trenchfill portion to completely fill the trench.

FIG. 7 is a cross-sectional view of the exemplary semiconductorstructure of FIG. 6 after forming contact via structures in the seconddielectric cap layer, the first dielectric layer and the firstdielectric cap layer.

FIG. 8 is a cross-sectional view of the exemplary semiconductorstructure of FIG. 7 after forming a third dielectric cap layer over thesecond dielectric cap layer, the contact via structures and the trenchfill portion and forming a second dielectric layer over the thirddielectric cap layer.

FIG. 9 is a cross-sectional view of the exemplary semiconductorstructure of FIG. 8 after forming interconnect structures in the seconddielectric layer and the third dielectric cap layer.

FIG. 10 is a simplified top view of FIG. 9 illustrating a first wiringscheme of the RM erasure element according to a first embodiment of thepresent application.

FIG. 11 is a simplified top view of FIG. 9 illustrating a second wiringscheme of the RM erasure element according to a second embodiment of thepresent application.

FIG. 12 is a block diagram of an integrated circuit including an PCMcell array and a RM erasure element according to an embodiment of thepresent application.

DETAILED DESCRIPTION

The present application will now be described in greater detail byreferring to the following discussion and drawings that accompany thepresent application. It is noted that the drawings of the presentapplication are provided for illustrative purposes only and, as such,the drawings are not drawn to scale. It is also noted that like andcorresponding elements are referred to by like reference numerals.

In the following description, numerous specific details are set forth,such as particular structures, components, materials, dimensions,processing steps and techniques, in order to provide an understanding ofthe various embodiments of the present application. However, it will beappreciated by one of ordinary skill in the art that the variousembodiments of the present application may be practiced without thesespecific details. In other instances, well-known structures orprocessing steps have not been described in detail in order to avoidobscuring the present application.

FIG. 1 is a cross-sectional view of an exemplary semiconductor structureincluding an array of memory cells formed over a semiconductor substrate10 including an access circuitry for the memory cells according to anembodiment of the present application. The access circuitry may includetransistors such as complementary metal oxide semiconductor (CMOS)transistors or bipolar junction transistors (BJTs) or diodes. In oneembodiment and as shown in FIG. 1, the access circuitry includes accesstransistors formed by typical CMOS processing techniques known in theart. Each of access transistors is defined by an active gate (not shown)present on an active device region of the semiconductor substrate 10 anda source region (not shown) and a drain region 12 present in portions ofthe semiconductor substrate 10 located on opposite sides of the activegate. A shallow trench isolation (STI) structure 14 is embedded in thesemiconductor substrate 10 to isolate adjacent access transistors. Adummy gate 16 may be formed on the STI structure 14 as a localinterconnect structure for access transistors. The active gate and dummygate may each include a respective gate stack including a gate metal anda metal silicide located on top of the gate metal.

An interlevel dielectric (ILD) layer 20 is formed on the semiconductorsubstrate 10 overlying the access circuitry. The ILD layer 20 typicallyincludes a low-k dielectric material such as, for example, siliconoxide, organosilicate glass or borophophosilicate glass. The ILD layer20 can be formed by utilizing a deposition process such as, for example,chemical vapor deposition (CVD), physical vapor deposition (PVD) orspin-on coating.

Various bottom contact structures are then formed in the ILD layer 20 byforming contact openings (not shown) extending through the ILD layer 20and filling the contact openings with a conductive material such as, forexample, tungsten (W), titanium nitride (TiN) or copper (Cu). In someembodiments of the present application, before filling the contactopenings with the conductive material, a contact liner (not shown) maybe formed on exposed surfaces of each contact opening. In oneembodiment, the contact liner includes TiN. In some embodiments of thepresent application and when the contact structures are formed of W,conductive caps of TiN (not shown) may also be formed on top of thebottom contact structures by recessing the conductive material depositedin the contact openings to provide voids and filling the voids with TiN.The bottom contact structures extend through the ILD layer 20 andinclude first bottom contact structures 22 contacting drain regions 12of the access transistors, a second bottom contact structure 24contacting the local interconnect structure (i.e., the dummy gate 16),and a third bottom contact structure 26 contacting the top surface ofthe semiconductor 10 or local interconnect structure (not shown). Thethird bottom contact structure 26 provides electrical communication toperiphery circuitry (not shown).

Next, an insulator layer 30 containing an array of bottom electrodes isformed over the bottom contact structures 22, 24, 26 and the ILD layer20. The insulator layer 30 may include a dielectric material such assilicon oxide, silicon nitride, silicon oxynitride, or a combinationthereof. In one embodiment, the insulator layer 30 is composed ofsilicon nitride. The insulator layer 30 may be formed utilizing adeposition process such as, for example, CVD or PECVD. The insulatorlayer 30 that is formed may have a thickness ranging from 50 nm to 100nm, although lesser and greater thicknesses can also be employed.

The bottom electrodes 32, 34 are separated from one another by theinsulator layer 30 and include first bottom electrodes 32 contacting thefirst bottom contact structures 22, and a second bottom electrode 34contacting the second bottom contact structure 24. Each of the bottomelectrodes 32, 34 is composed of a conductive material such as, forexample, TiN, W or tantalum nitride (TaN). The bottom electrodes 32, 34can be any shape (e.g., ring shape or line type) as long as the bottomelectrodes 32, 34 have a very small contact surface on the top. The verysmall contact surface tends to concentrate current density duringoperation of the circuit. The resulted high current density allowseffectively triggering the reaction of a reactive material in a RMerasure element later formed on top of the second bottom electrode 34.The area of the top contact surface of each of the bottom electrodes 32,34 can be from 10 nm² to 1000 nm², although lesser and greater areas canalso be employed.

In one embodiment, each of the bottom electrodes 32, 34 has asublithographic lateral dimension, that is, the lateral dimension ofeach bottom electrode 32, 34 is less than the lateral dimension of onefeature size of the lithographic technology employed to fabricate thebottom electrodes 32, 34. For example, the lateral dimension of thebottom electrodes 32, 34 is typically less than 40 nm. In oneembodiment, the lateral dimension of the bottom electrodes 32, 34 isapproximately one-third the lithographic feature size.

In one embodiment, the bottom electrodes 32, 34 can be formed by akeyhole transfer method described in U.S. patent application Ser. No.12/855,078, now U.S. Pat. No. 8,728,859, titled “Small Footprint PhaseChange Memory Cell”, which is owned by the assignee of the presentapplication, and the entire disclosure of which is incorporated hereinby reference.

Further shown in FIG. 1, a stack including, from bottom to top, a phasechange material element 36 and a top electrode 38 is formed over each ofthe first bottom electrodes 32. A first bottom electrode 32, a phasechange material elements 36 and a top electrode 38 together defines aPCM cell. After formation of the bottom electrodes 32, 34, a phasechange material layer (not shown) is deposited as a blanket layer on topsurfaces of the bottom electrode 32, 34 and the insulator layer 30. Thephase change material layer may include a chalcogenide based materialthat can be programmable to an amorphous (high resistance) state or acrystalline (low resistance) state with application of heat. Exemplarychalcogenide based materials include, but are not limited, to Ge₂Sb₂Te₅(GST), SbTe and In₂Se₃. The phase change material layer can be formedutilizing PVD-sputtering or magnetron-sputtering. Next, a top electrodelayer (not shown) is deposited as a blanket layer on a top surface ofthe phase change material layer. The top electrode layer may include aconductive material the same as, or different from, the conductivematerial proving the bottom electrodes 32, 34. In one embodiment, thetop electrode layer includes TiN. Subsequently, the material stack ofthe phase change material layer and the top electrode layer is patternedutilizing conventional photolithography and etching techniques toprovide the stacks of the phase change material elements 36 and the topelectrodes 38. The phase change material elements 36 and the topelectrodes 38 have a lithographic lateral dimension which is greaterthan the sublithographic lateral dimension of the first bottomelectrodes 32. The sidewalls of the first bottom electrodes 32 are thusoffset from the sidewalls of the phase change material elements 36 andthe top electrodes 38.

Referring to FIG. 2, a first dielectric cap layer 40 is conformallydeposited on the exposed surfaces of the insulator layer 30, the PCMcells (32, 36, 38) and the second bottom electrode 34, for example, byCVD or atomic layer deposition (ALD). The first dielectric cap layer 40is typically composed of a dielectric nitride such as, for example,silicon nitride, silicon oxynitride, silicon boron nitride or siliconcarbon oxynitride. The thickness of the first dielectric cap layer 40can be from 5 nm to 30 nm, although lesser and greater thicknesses canbe employed.

Referring to FIG. 3, a first dielectric layer 50 is deposited over thefirst dielectric cap layer 40. The first dielectric layer 50 may includea dielectric material that is different from the dielectric material ofthe first dielectric cap layer 40. In one embodiment and when the firstdielectric cap layer 40 is composed of silicon nitride, the firstdielectric layer 50 can include a dielectric oxide such as siliconoxide. The first dielectric layer 50 can be formed by CVD, PVD or spincoating. The first dielectric layer 50 may be self-planarizing, or thetop surface of the first dielectric layer 50 can be planarized, forexample, by chemical mechanical planarization (CMP). The planarized topsurface of the first dielectric layer 50 thus formed is located abovethe topmost surfaces of PCM cells (32, 36, 38).

Referring to FIG. 4, a trench 52 is formed extending through the firstdielectric layer 50 and the first dielectric cap layer 40, thus exposingthe second bottom electrode 34 at the bottom of the trench 52. Thetrench 52 is formed in close proximity to adjacent phase change materialelements 36 in the PCM cells (32. 36, 38) such that the reactivematerial erasure element later formed in the trench 52 is situatedsufficiently close to the adjacent PCM cells (32, 36, 38). This allowssufficient delivery of heat generated from the reaction of the reactivematerial to the PCM cells (32, 36, 38), which in turn causes the phasetransformation of the phase change material. The state change of thephase change material leads to irreversible erasure of any data storedin the PCM cells (32, 36, 38). In one embodiment, the lateral distancebetween each sidewall of the trench 52 and a proximal sidewall of thephase change material element 36 can be from 0.5 μm to 5 μm.

The trench 52 can be formed by applying a mask layer over the firstdielectric layer 50 and lithographically patterning the mask layer toform an opening therein. The opening overlies the second bottomelectrode 34. In one embodiment and as shown in FIG. 4, the mask layeris a bilayer resist including a release layer 54 contacting a topsurface of the first dielectric layer 50 and a photoresist layer 56overlying the release layer 54. An undercut 58 of the release layer 54beneath the photoresist layer 56 occurs during the lithographypatterning process. The undercut 58 is desirable since it prevents areactive material subsequently deposited from being formed on sidewallsof the photoresist layer 56 and connected to the reactive materialdeposited within the trench 52, and allows solvent to reach and dissolvethe release layer 54 during removal of the mask layer (54, 56) and thereactive material deposited thereon.

The pattern of the opening in the mask layer (54, 56) is transferredthrough the first dielectric layer 50 and the first dielectric cap layer40 to form the trench 52. In one embodiment, an anisotropic etch, suchas RIE, may be performed to remove a portion of the first dielectriclayer 50 that is exposed by the opening and a portion of the firstdielectric cap layer 40 underlying the exposed portion of the firstdielectric layer 50.

Referring to FIG. 5, a reactive material (RM) erasure element 60 isformed within the trench 52. The RM erasure element 60 may include areactive material that is inert during processing and survives normalchip operation and stress tests, but is sensitive enough to be ignitedduring tampering, thus providing sufficient heat to cause the phasetransformation of the phase change material element 36 in the PCM cells(32, 36, 38). For example, the RM erasure element 60 may include amultilayer metal stack that causes an exothermic reaction when triggeredby a current pulse generated by a voltage source. In one embodiment, theRM erasure element 60 includes Al/Pd, Ni/Al, Cu/Pd, Si/Cr or SiO₂/Al.Additionally, the preset application can utilize reactive materialcompositions described in Tables 1-3 in Fischer et al. “A Survey ofCombustible Metals, Thermites, and Intermetallics for PyrotechnicApplications,” presented at the 32nd AIAA/ASME/SAE/ASEE Joint PropulsionConference (1996), the disclosure of which is hereby incorporated byreference.

The RM erasure element 60 can be formed by depositing a reactivematerial in the trench 52 by any suitable deposition method such as, forexample, CVD or PVD. The thickness of the RM erasure element 60 is setsuch that a top surface of the RM erasure element 60 is located belowthe top surface of the first dielectric layer 50. The RM erasure element60 thus does not connect to the deposited reactive material on thesidewalls of the photoresist layer 56. In one embodiment, the thicknessof the RM erasure element 60 can be from 1 nm to 15 μm, although lesserand greater thicknesses can also be employed. Upon dissolving therelease layer 54 by a suitable solvent such as acetone, the depositedreactive material on top of the photoresist layer 56 can be lift offalong with the photoresist layer 56, leaving only the RM erasure element60 in the trench 52.

As described above, the processes in formation of the RM erasure element60 in the present application are compatible with standard CMOSfabrication techniques, thereby allowing reducing fabrication costduring implementation and integration of such component with the PCMcells (32, 36, 38).

Referring to FIG. 6, a second dielectric cap 62 is conformally depositedon the top surfaces of the first dielectric layer 50 and the RM erasureelement 60 by CVD or ALD. The second dielectric cap layer 62 is composedof a dielectric nitride such as, for example, silicon nitride, siliconoxynitride, silicon boron nitride or silicon carbon oxynitride. Thethickness of the second dielectric cap layer 62 can be from 5 nm to 30nm, although lesser and greater thicknesses can be employed.

Next, a trench fill portion 64 is formed over the RM erasure element 60to completely fill the trench 52. The trench fill portion 64 may includea dielectric material that is different from the dielectric material ofthe second dielectric cap layer 62. In one embodiment, when the seconddielectric cap layer 62 includes silicon nitride, the trench fillportion 64 may include a dielectric oxide such as silicon oxide. Thetrench fill portion 64 can be formed by depositing a dielectric materialover the second dielectric cap layer 62, for example, by CVD, andplanarizing the deposited dielectric material employing the seconddielectric cap layer 62 as a stopping layer. The planarization of thedeposited dielectric material can be performed, for example, by CMP, arecess etch, or a combination thereof. In one embodiment, the topsurface of the trench fill portion 64 is coplanar with the topmostsurface of the second dielectric cap layer 62.

Referring to FIG. 7, various contact via structures are formed toprovide electrical connection to the PCM cells (32, 36, 38) and theperiphery circuitry. The contact via structures includes first contactvia structures 66 that extend through the second dielectric cap layer62, the first dielectric layer 50 and the first dielectric cap 40 andcontact the top electrodes 38 of the PCM cells (32, 36, 38) and a secondcontact via structure 68 that extends through the second dielectric caplayer 62, the first dielectric layer 50, the first dielectric cap 40 andthe insulator layer 30 and contacts the third bottom contact structure26. The contact via structures 66, 68 can be formed by performingprocessing steps of FIG. 1 employed for formation of the bottom contactstructures 22, 24, 26.

Referring to FIG. 8, a third dielectric cap layer 72 is conformallydeposited on the top surfaces of second dielectric cap layer 62, thetrench fill portion 64 and the contact via structures 66, 68, forexample, by CVD or ALD. The third dielectric cap layer 72 is typicallycomposed of a dielectric nitride such as, for example, silicon nitride,silicon oxynitride, silicon boron nitride or silicon carbon oxynitride.The thickness of the third dielectric cap layer 72 can be from 5 nm to30 nm, although lesser and greater thicknesses can be employed.

Next, a second dielectric layer 74 is deposited over the thirddielectric cap layer 72. The second dielectric layer 74 may include adielectric material that is different from the dielectric material ofthe third dielectric cap layer 72. In one embodiment and when the thirddielectric cap layer 72 is composed of silicon nitride, the seconddielectric layer 74 can include a dielectric oxide such as siliconoxide. The second dielectric layer 74 can be formed by CVD, PVD or spincoating. The second dielectric layer 74 may be self-planarizing, or thetop surface of the second dielectric layer 74 can be planarized, forexample, by CMP.

Referring to FIG. 9, interconnect structures are formed extendingthrough the second dielectric layer 74 and the third dielectric caplayer 72 to provide electrical connection to the contact via structures66, 68. The interconnect structures include first interconnectstructures 76 contacting the first contact via structures 66 and asecond interconnect structure 78 contacting the second contact viastructure 68. The interconnect structures 76, 78 can be formed byperforming processing steps of FIG. 1 employed for formation of thebottom contact structures 22, 24, 26.

FIG. 10 is a simplified top view of FIG. 9 illustrating a first wiringscheme of RM erasure elements according to a first embodiment of thepresent application. In the first embodiment, a plurality ofstrip-shaped RM erasure elements is formed. Each of the RM erasureelements is arranged between a pair of adjacent columns of PCM cells inan PCM cell array and is electrically coupled to a voltage sourcethrough electrical contacts located at opposite ends of each of the RMerasure elements. The electrical contacts are in electricalcommunication with the second interconnect structure in a firstmetallization level. The second interconnect structure is electricallyconnected to the second bottom electrode through the second contact viastructure and the third bottom contact structure. During erasure,current that flows into one end of each of the RM erasure elements andflows out the opposite end of each of the RM erasure elements causes areaction of the reactive material which releases enough heat tocrystallize and erase the state of each adjacent PCM cell.

FIG. 11 is a simplified top view of FIG. 9 illustrating a second wiringscheme of a RM erasure element according to a second embodiment of thepresent application. In the second embodiment, the RM erasure element isa contiguous layer having a serpentine configuration such that parallelline portions of the RM erasure element are connected by a connectingsegment. Each line portion of the RM erasure element is located betweena pair of adjacent columns of PCM cells in an PCM cell array. The RMerasure element is electrically coupled to a voltage source throughelectrical contacts located at one end of the RM erasure element. Theelectrical contacts are in electrical communication with the secondinterconnect structure in a first metallization level. The secondinterconnect structure is electrically connected to the second bottomelectrode through the second contact via structure and the third bottomcontact structure. During erasure, current that flows in and out of theRM erasure element through electrical contact formed at the same endcauses a reaction of the reactive material which releases enough heat tocrystallize and erase the state of each PCM cell. In the secondembodiment, because the RM erasure element is electrically coupled tothe electrical contacts located at the same end of the RM erasureelement, the contact via structures need only to be present at a singleplace. This can provide a great design flexibility.

FIG. 12 is a block diagram of an integrated circuit according to anembodiment of the present application. The integrated circuit includes1200 a PCM cell array 1202 and a RM erasure element 1204 implemented asdescribed above. A periphery circuitry 1206 is electrically coupled tothe PCM cell array 1202 and is configured to apply appropriate voltagesto PCM cell array 1202 for write and read purposes. A RM circuitry 1208is electrically coupled to the RM erasure element 1204 and is configuredto control the amplitude of the current so that sufficient current canflow through the RM erasure element 1204 to trigger the reaction of thereactive material in the RM erasure element 1204. A tamper detectionunit 1210 is electrically coupled to the RM circuitry 1208 to generateerase signal in response to the existence of one or several erase demandscenarios. The tamper detection unit 1210 may include photovoltaiccells, x-ray detectors or shock detectors. An arming switch 1212 may besituated in an electrical path between the tamper detection unit 1210and the RM circuitry 1208 and is configured to prevent a flow of currentuntil a deactivation or disarming signal is received. A logic element1214 (e.g., a processor) is electrically coupled to the PCM peripherycircuitry 1206 and the RM circuitry 1208 and is configured to perform analgorithm to determine conditions for triggering the reaction of thereactive material based on a multitude of inputs including inputsrelated to date and time, inputs related to environment such as, forexample, temperature, humidity, pressure and precipitation, and inputsrelated transportation such as, for example, altitude, velocity,acceleration and direction.

While the application has been described in terms of specificembodiments, it is evident in view of the foregoing description thatnumerous alternatives, modifications and variations will be apparent tothose skilled in the art. Each of the embodiments described herein canbe implemented individually or in combination with any other embodimentunless expressly stated otherwise or clearly incompatible. Accordingly,the application is intended to encompass all such alternatives,modifications and variations which fall within the scope and spirit ofthe application and the following claims.

What is claimed is:
 1. A semiconductor structure, comprising: a phasechange memory (PCM) cell located in a first region of a semiconductorsubstrate, wherein the PCM cell comprises a first bottom electrode, aphase change material element located on a top contact surface of thefirst bottom electrode and a top electrode located on the phase changematerial element; and a reactive material (RM) erasure element locatedin a second region of the semiconductor substrate and proximal to oneside of the PCM cell, wherein the RM erasure element contacts a topcontact surface of a second bottom electrode that is present in thesecond region of the semiconductor substrate, and a bottom surface ofthe RM erasure element is coplanar with a bottom surface of the phasechange material element.
 2. The semiconductor structure of claim 1,wherein a lateral distance between the PCM cell and the RM erasureelement is from 0.5 μm to 5 μm.
 3. The semiconductor structure of claim1, wherein the phase change material element comprises Ge₂Sb₂Te₅ (GST),SbTe or In₂Se₃, and wherein the RM erasure element comprises Al/Pd,Ni/Al, Cu/Pd, Si/Cr or SiO₂/Al.
 4. The semiconductor structure of claim1, wherein an area of the top contact surface of each of the firstbottom electrode and the second bottom electrode ranges from 10 nm² to1000 nm².
 5. The semiconductor structure of claim 1, wherein the firstbottom electrode and the second bottom electrode are laterallysurrounded by an insulator layer, wherein the first bottom electrodecontacts a first bottom contact structure that is electrically coupledto a drain region of an access transistor, and the second bottomelectrode contacts a second bottom contact structure that is laterallyadjacent to the first bottom contact structure, and wherein the firstbottom contact structure and the second bottom contact structure areembedded in an interlevel dielectric (ILD) layer.
 6. The semiconductorstructure of claim 5, wherein the interlevel dielectric layer (ILD)present on a top surface of the semiconductor substrate.
 7. Thesemiconductor structure of claim 5, wherein the phase change materialelement and the top electrode of the PCM cell and the RM erasure elementare laterally surrounded by a first dielectric layer that is presentover the insulator layer and both of the first bottom electrode and thesecond bottom electrode, wherein a top surface of the first dielectriclayer is located above a top surface of each of the top electrode andthe RM erasure element.
 8. The semiconductor structure of claim 7,further comprising a first dielectric cap present on a sidewall of boththe phase change material element and the top electrode and the topsurface of the top electrode, wherein the first dielectric layer islocated on top of the first dielectric cap.
 9. The semiconductorstructure of claim 6, further comprising a dielectric fill portionlocated over the RM erasure element.
 10. The semiconductor structure ofclaim 9, further comprising a second dielectric cap present on the topsurface of the RM erasure element, wherein the dielectric fill portionis located over the second dielectric cap.
 11. The semiconductorstructure of claim 9, further comprising a first contact via structurecontacting the top surface of the top electrode, and a second contactvia structure contacting a top surface of a third bottom contactstructure that is embedded in the ILD layer.
 12. The semiconductorstructure of claim 11, further comprising a first interconnect structurecontacting a top surface of the first contact via structure, and asecond interconnect structure contacting a top surface of the second viastructure, wherein the first interconnect structure and the secondinterconnect structure are laterally surrounded by a second contactlevel dielectric layer.
 13. The semiconductor structure of claim 1,wherein the first bottom electrode and the second bottom electrode arearranged in parallel and are separated from one another by an insulatorlayer.
 14. The semiconductor structure of Claim 1, wherein both thephase change material element and the top electrode has a lateraldimension greater than that of the first bottom electrode.
 15. Thesemiconductor structure of claim 1, further comprising an additional PCMcell located in a third region of the semiconductor substrate proximalto the second region, wherein the RM erasure element is located betweenthe PCM cell and the additional PCM cell.
 16. A semiconductor structure,comprising: an array of phase change memory (PCM) cells arranged in rowsand columns, wherein each of the PCM cells of the array of PCM cellscomprises a first bottom electrode, a phase change material elementlocated on a top contact surface of first bottom electrode and a topelectrode located on the phase change material element; and at least onereactive material (RM) erasure element disposed between each pair ofadjacent columns of the array of PCM cells, wherein the at least one RMerasure element contacts a top contact surface of a second bottomelectrode that is located laterally adjacent to the first bottomelectrode, wherein a bottom surface of the at least one RM erasureelement is coplanar with a bottom surface of the phase change materialelement in each PCM cell of the array of PCM cells.
 17. Thesemiconductor structure of Claim 16, wherein a lateral distance betweenthe at least one RM erasure element and an adjacent PCM cell of thearray of PCM cells is from 0.5 μm to 5 μm.
 18. The semiconductorstructure of claim 16, further comprising a pair of electrical contactslocated at opposite ends of the at least one RM erasure element.
 19. Thesemiconductor structure of claim 16, wherein the at least one RM erasureelement is a contiguous layer, and further comprising a pair ofelectrical contacts located at one end of the at least one RM erasureelement.